Hyungsoon Shin,: search on Z-Library

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1

Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM

Kim, Hyeonjeong, Yoo, Songyi, Kang, In-Man, Cho, Seongjae, Sun, Wookyung, Shin, Hyungsoon

Journal:

Year:

2020

Language:

english

File:

PDF, 2.01 MB

english, 2020

2

The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT

Kim, Miryeon, Sun, Wookyung, Kang, Jongseuk, Shin, Hyungsoon

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 1.59 MB

english, 2017

3

Analysis of a Lateral Grain Boundary for Reducing Performance Variations in Poly-Si 1T-DRAM

Yoo, Songyi, Sun, Wookyung, Shin, Hyungsoon

Journal:

Year:

2020

File:

PDF, 2.99 MB

2020

4

An analytical model for hot-carrier-induced degradation of deep-submicron n-channel LDD MOSFETs

Jung-Suk Goo, Young-Gwan Kim, Hyeokjae L'Yee, Ho-Yup Kwon, Hyungsoon Shin

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 595 KB

english, 1995

5

A new hole mobility model for hydrodynamic simulation

Chanho Lee, Jung-Sik Kim, Hyungsoon Shin, Young-June Park, Hong-Shick Min

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 106 KB

english, 2000

6

Memristor Neural Network Training with Clock Synchronous Neuromorphic System

Jo, Sumin, Sun, Wookyung, Kim, Bokyung, Kim, Sunhee, Park, Junhee, Shin, Hyungsoon

Journal:

Year:

2019

Language:

english

File:

PDF, 1.84 MB

english, 2019

7

Switching Time and Stability Evaluation for Writing Operation of STT-MRAM Crossbar Array

Lim, Hyein, Lee, Seungjun, Shin, Hyungsoon

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 2.44 MB

english, 2016

8

An 0.1-μm asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability

Hyungsoon Shin, Seungjun Lee

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 90 KB

english, 1999

9

A Band-Engineered One-Transistor DRAM with Improved Data Retention and Power Efficiency

Yu, Eunseon, Cho, Seongjae, Shin, Hyungsoon, Park, Byung-Gook

Journal:

IEEE Electron Device Letters

Year:

2019

File:

PDF, 5 KB

2019

10

[IEEE IEEE International Conference on Simulation of Semiconductor Processes and Devices - Boston, MA, USA (2003.09.3-2003.09.5)] International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. - An efficient method for frequency-domain simulation of short channel MOSFET including the non-quasistatic effect

Kyu-Il Lee,, Chanho Lee,, Hyungsoon Shin,, Young June Park,, Hong Shick Min,

Year:

2003

Language:

english

File:

PDF, 353 KB

english, 2003

11

Optimization Considerations for Short Channel Poly-Si 1T-DRAM

Yoo, Songyi, Sun, Woo-Kyung, Shin, Hyungsoon

Journal:

Year:

2020

File:

PDF, 3.03 MB

2020

12

Optimization of uniaxial stress for high electron mobility on biaxially-strained n-MOSFETs

Sun, Wookyung, Shin, Hyungsoon

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 786 KB

english, 2014

13

The 3-Bit Gray Counter Based on Magnetic-Tunnel-Junction Elements

Seungyeon Lee, Nakmyeong Kim, Heejung Yang, Gamyoung Lee, Seungjun Lee, Hyungsoon Shin

Journal:

IEEE Transactions on Magnetics

Year:

2007

Language:

english

File:

PDF, 375 KB

english, 2007

14

Advanced Circuit-Level Model for Temperature-Sensitive Read/Write Operation of a Magnetic Tunnel Junction

Lim, Hyein, Lee, Seungjun, Shin, Hyungsoon

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.42 MB

english, 2015

15

Fabrication and Characterization of a Thin-Body Poly-Si 1T DRAM with Charge-Trap Effect

Seo, Jae Hwa, Yoon, Young Jun, Yu, Eunseon, Sun, Wookyung, Shin, Hyungsoon, Kang, In Man, Lee, Jong-Ho, Cho, Seongjae

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 1.06 MB

english, 2019

16

Influence of trench-oxide depth on junction-size dependence of -particle-induced charge collection

Sun, Wookyung, Park, Ji-Sun, Shin, Hyungsoon

Journal:

Electronics Letters

Year:

2000

Language:

english

File:

PDF, 378 KB

english, 2000

17

Analysis of Operation Characteristics of Junctionless Poly-Si 1T-DRAM in Accumulation Mode

Kim, Hyeon Jeong, Kang, In Man, Cho, Seongjae, Sun, Wookyung, Shin, Hyungsoon

Journal:

Semiconductor Science and Technology

Year:

2019

Language:

english

File:

PDF, 1.40 MB

english, 2019

18

Analysis of the substantial reduction of strain-induced mobility enhancement in (110)-oriented ultrathin double-gate MOSFETs

Choi, Sujin, Sun, Wookyung, Shin, Hyungsoon

Journal:

Applied Physics Express

Year:

2016

File:

PDF, 1.76 MB

2016

19

Three-dimensional simulation of discrete oxide charge effects in 0.1 μm MOSFETs

Choong-Ryul Ryou, Sung Woo Hwang, Hyungsoon Shin, Chan-Ho Lee, Young June Park, Hong Shick Min

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 175 KB

english, 2001

20

A sensing circuit for MRAM based on 2MTJ–2T structure

Eun-Jung Jang, Seung-Yoen Lee, Hye-Jin Kim, Hyungsoon Shin, Seungjun Lee, Daejung Kim

Journal:

Current Applied Physics

Year:

2004

Language:

english

File:

PDF, 654 KB

english, 2004

21

A new weight redistribution technique for electron-electron scattering in the MC simulation

Jongchol Kim, Hyungsoon Shin, Chanho Lee, Park, Y.J., Hong Shick Min

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 560 KB

english, 2004

22

[IEEE 1994 IEEE International Integrated Reliability Workshop (IRWS) - Lake Tahoe, CA, USA (16-19 Oct. 1994)] Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) - Enhanced degradation of nMOSFET's under hot carrier stress at elevated temperatures due to the length of velocity saturation region

Hyunsang Hwang,, Jung-Suk Goo,, Hoyup Kwon,, Hyungsoon Shin,

Year:

1994

Language:

english

File:

PDF, 307 KB

english, 1994

23

A Full Adder Design Using Serially Connected Single-Layer Magnetic Tunnel Junction Elements

Seungyeon Lee, Sunae Seo, Seungjun Lee, Hyungsoon Shin

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 643 KB

english, 2008

24

A Novel Sensing Circuit for High Speed Synchronous Magneto-Resistive RAM

Kim, Hyejin, Lee, Seungyeon, Lee, Seungjun, Shin, Hyungsoon, Kim, Daejung

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 482 KB

english, 2004

25

Multibit-Generating Pulsewidth-Based Memristive-PUF Structure and Circuit Implementation

Choi, Seoyeon, Kim, Dayoung, Choi, Yunyeong, Sun, Wookyung, Shin, Hyungsoon

Journal:

Year:

2020

File:

PDF, 3.05 MB

2020

26

Efficient frequency-domain simulation technique for short-channel MOSFET

Kyu-Il Lee, Chanho Lee, Hyungsoon Shin, Park, Y.J., Hong Shick Min

Journal:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Year:

2005

Language:

english

File:

PDF, 861 KB

english, 2005

27

Read margin analysis of crossbar arrays using the cell-variability-aware simulation method

Sun, Wookyung, Choi, Sujin, Shin, Hyungsoon

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 489 KB

english, 2017

28

Magneto-Logic Device Based on a Single-Layer Magnetic Tunnel Junction

Seungyeon Lee, Sunghoon Choa, Seungjun Lee, Hyungsoon Shin

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 458 KB

english, 2007

29

ReRAM Crossbar Array: Reduction of Access Time by Reducing the Parasitic Capacitance of the Selector Device

Lim, Hyein, Sun, Wookyung, Shin, Hyungsoon

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 912 KB

english, 2016

30

[IEEE Proceedings of 1995 IEEE International Reliability Physics Symposium - Las Vegas, NV (1995.04.4-1995.04.6)] 33rd IEEE International Reliability Physics Symposium - Impact of velocity saturation region on nMOSFET's hot carrier reliability at elevated temperatures

Hyunsang Hwang,, Jung-Suk Goo,, Hoyup Kwon,, Hyungsoon Shin,

Year:

1995

Language:

english

File:

PDF, 306 KB

english, 1995

31

Analytical analysis of short-channel effects in MOSFETs for sub-100 nm technology

Park, Ji-Sun, Lee, Seung-Yeon, Shin, Hyungsoon, Dutton, R.W.

Journal:

Electronics Letters

Year:

2002

Language:

english

File:

PDF, 269 KB

english, 2002

32

New modeling method for the dielectric relaxation of a DRAM cell capacitor

Choi, Sujin, Sun, Wookyung, Shin, Hyungsoon

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 247 KB

english, 2017

33

Modeling of alpha-particle-induced soft error rate in DRAM

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 402 KB

english, 1999

34

An anomalous device degradation of SOI narrow width devices caused by STI edge influence

Hyeokjae Lee, Jong-Ho Lee, Hyungsoon Shin, Young-June Park, Hong Shick Min

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 328 KB

english, 2002

35

Low-frequency noise degradation caused by STI interface effects in SOI-MOSFETs

Hyeokjae Lee,, Jong-Ho Lee,, Hyungsoon Shin,, Young June Park,, Hong Shick Min,

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 74 KB

english, 2001

36

Erratum: “Circuit-Level Model of Phase-Locked Spin-Torque Oscillators”

Ahn, Sora, Lim, Hyein, Kim, Miryeon, Shin, Hyungsoon, Lee, Seungjun

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 90 KB

english, 2013

37

[IEEE 2019 International Conference on Electronics, Information, and Communication (ICEIC) - Auckland, New Zealand (2019.1.22-2019.1.25)] 2019 International Conference on Electronics, Information, and Communication (ICEIC) - Implementation of multi-layer neural network system for neuromorphic hardware architecture

Sun, Wookyung, Park, Junhee, Jo, Sumin, Lee, Jungwon, Shin, Hyungsoon

Year:

2019

Language:

english

File:

PDF, 459 KB

english, 2019

38

Guideline model for the bias-scheme-dependent power consumption of a resistive random access memory crossbar array

Sun, Wookyung, Choi, Sujin, Lim, Hyein, Shin, Hyungsoon

Journal:

Japanese Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 1.27 MB

english, 2016

39

Unified model for junction size, substrate doping, and energy dependence of -particle-induced charge collection

Shin, Hyungsoon

Journal:

Electronics Letters

Year:

1996

Language:

english

File:

PDF, 79 KB

english, 1996

40

Anomalous hot carrier degradation of nMOSFET's at elevated temperatures

Hyunsang Hwang, Jung-suk Goo, Hoyup Kwon, Hyungsoon Shin

Journal:

IEEE Electron Device Letters

Year:

1995

Language:

english

File:

PDF, 237 KB

english, 1995

41

[IEEE TENCON 2015 - 2015 IEEE Region 10 Conference - Macao (2015.11.1-2015.11.4)] TENCON 2015 - 2015 IEEE Region 10 Conference - An analysis of the read margin and power consumption of crossbar ReRAM arrays

Sujin Choi,, Wookyung Sun,, Hyein Lim,, Hyungsoon Shin,

Year:

2015

Language:

english

File:

PDF, 238 KB

english, 2015

42

A new bias scheme for a low power consumption ReRAM crossbar array

Sun, Wookyung, Choi, Sujin, Shin, Hyungsoon

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.98 MB

english, 2016

43

A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit Simulation

Lim, Hyein, Lee, Seungjun, Shin, Hyungsoon

Journal:

Active and Passive Electronic Components

Year:

2016

Language:

english

File:

PDF, 2.49 MB

english, 2016

44

Analysis of Read Margin and Write Power Consumption of a 3D vertical RRAM (VRRAM) Crossbar Array

Choi, Sujin, Sun, Wookyung, Shin, Hyungsoon

Journal:

IEEE Journal of the Electron Devices Society

Year:

2018

Language:

english

File:

PDF, 1.07 MB

english, 2018

45

Kaleidoscopic fluorescent arrays for machine-learning-based point-of-care chemical sensing

Kim, Hyungi, Choi, Sang-Kee, Ahn, Jungmo, Yu, Hojeong, Min, Kyoungha, Hong, Changgi, Shin, Ik-Soo, Lee, Sanghee, Lee, Hakho, Im, Hyungsoon, Ko, JeongGil, Kim, Eunha

Journal:

Sensors and Actuators B: Chemical

Year:

2021

File:

PDF, 4.82 MB

2021

46

Analysis of stress-induced mobility enhancement on (100)-oriented single- and double-gate n-MOSFETs using silicon-thickness-dependent deformation potential

Choi, Sujin, Sun, Wookyung, Shin, Hyungsoon

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 908 KB

english, 2015

47

Anomalous drain-induced barrier lowering effect of thin-film transistors due to capacitive coupling voltage of light-shield metal

Shin, Hyungsoon, Kim, Miryeon

Journal:

Electronics Letters

Year:

2014

Language:

english

File:

PDF, 177 KB

english, 2014

48

[IEEE 2018 International Conference on Electronics, Information, and Communication (ICEIC) - Honolulu, HI (2018.1.24-2018.1.27)] 2018 International Conference on Electronics, Information, and Communication (ICEIC) - Analysis of read margin of crossbar array according to selector and resistor variation

Sun, Wookyung, Shin, Hyungsoon

Year:

2018

Language:

english

File:

PDF, 862 KB

english, 2018

49

A New Circuit Model for Spin-Torque Oscillator Including Perpendicular Torque of Magnetic Tunnel Junction

Lim, Hyein, Ahn, Sora, Kim, Miryeon, Lee, Seungjun, Shin, Hyungsoon

Journal:

Advances in Condensed Matter Physics

Year:

2013

Language:

english

File:

PDF, 1.89 MB

english, 2013

50

[IEEE TENCON 2015 - 2015 IEEE Region 10 Conference - Macao (2015.11.1-2015.11.4)] TENCON 2015 - 2015 IEEE Region 10 Conference - Analysis of the effect of the density of states on the characteristics of thin-film transistors

Kim, Miryeon, Injae Lee,, Hyungsoon Shin,, Min-Ho Shin,

Year:

2015

Language:

english

File:

PDF, 590 KB

english, 2015

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